Title :
200V Super Junction MOSFET Fabricated by High Aspect Ratio Trench Filling
Author :
Yamauchi, Shoichi ; Shibata, Takumi ; Nogami, Shoji ; Yamaoka, Tomonori ; Hattori, Yoshiyuki ; Yamaguchi, Hitoshi
Author_Institution :
Res. Labs., Denso Corp., Nissin
Abstract :
In this paper, a new filling process using an anisotropic epitaxial growth was proposed as the fabrication method of a super junction (SJ) MOSFET. The anisotropic growth controlled with silicon (Si) and chlorine (Cl) source gases was applied to filling of the high-aspect-ratio trenches without voids. Using the process we succeeded in filling trenches with aspect ratio of 18, which is the highest aspect ratio works previously reported, and we fabricated a 200V SJ-MOSFET with a 2.7mum pitch trench gate structure. Consequently, the MOSFET showed electrical characteristics of the lowest on-resistance of 1.5 m-ohm-cm 2 and a breakdown voltage of 225V
Keywords :
chlorine; epitaxial growth; power MOSFET; silicon; 200 V; 225 V; Cl; SJ-MOSFET; Si; anisotropic epitaxial growth; chlorine source gas; high aspect ratio trench filling; silicon gas; super junction MOSFET; Anisotropic magnetoresistance; Distributed control; Electric variables; Epitaxial growth; Fabrication; Filling; Gases; MOSFET circuits; Scanning electron microscopy; Silicon;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666072
