DocumentCode
2367488
Title
Atomistic analysis of the vacancy diffusion mechanism
Author
List, S. ; Ryssel, H.
Author_Institution
Lehrstuhl fur Elektronische Bauelemente, Erlangen-Nurnberg Univ., Germany
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
27
Lastpage
28
Abstract
There is still a large amount of disagreement concerning the basic diffusion mechanisms in silicon. Especially, there has been a long standing controversy about the macroscopic diffusion equations in case of the vacancy mechanism. In this paper we have performed calculations of the diffusion coefficient and the transport coefficient of the dopants that account for the actual crystal structure of silicon. The results depend on the modification of the vacancy potential energy in the vicinity of the dopant atom.
Keywords
diffusion; elemental semiconductors; semiconductor doping; semiconductor process modelling; silicon; vacancies (crystal); Si; crystal structure; diffusion coefficient; dopant atom; potential energy; silicon; transport coefficient; vacancy mechanism; Bars; Equations; Lattices; Nearest neighbor searches; Potential energy; Predictive models; Semiconductor process modeling; Shape; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865257
Filename
865257
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