• DocumentCode
    2367505
  • Title

    Phosphorus pile-up model for SiO2-Si interface of p-channel MOSFETs

  • Author

    Akazawa, Masamichi ; Aoki, Takahiro ; Tazawa, Satoshi ; Sat, Yoshiyuki

  • Author_Institution
    Fac. of Eng., Hokkaido Univ., Sapporo, Japan
  • fYear
    1996
  • fDate
    2-4 Sept. 1996
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    Dopant distribution is very important when simulating the performance of LSI devices. Therefore dopant segregation should be taken into account when it occurs to the extent that it affects this distribution. This paper suggests that for p-channel MOSFETs the "phosphorus pile-up phenomenon" should be taken into account and proposes a simulation model.
  • Keywords
    MOSFET; doping profiles; elemental semiconductors; phosphorus; segregation; semiconductor device models; semiconductor doping; silicon; silicon compounds; LSI device; Si:P-SiO2; SiO2-Si interface; dopant distribution; p-channel MOSFET; phosphorus pile-up; segregation; simulation model; Annealing; Fabrication; Impurities; Laboratories; Large scale integration; MOSFETs; Oxidation; Semiconductor process modeling; Temperature dependence; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
  • Print_ISBN
    0-7803-2745-4
  • Type

    conf

  • DOI
    10.1109/SISPAD.1996.865258
  • Filename
    865258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2367505