Title :
Phosphorus pile-up model for SiO2-Si interface of p-channel MOSFETs
Author :
Akazawa, Masamichi ; Aoki, Takahiro ; Tazawa, Satoshi ; Sat, Yoshiyuki
Author_Institution :
Fac. of Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
Dopant distribution is very important when simulating the performance of LSI devices. Therefore dopant segregation should be taken into account when it occurs to the extent that it affects this distribution. This paper suggests that for p-channel MOSFETs the "phosphorus pile-up phenomenon" should be taken into account and proposes a simulation model.
Keywords :
MOSFET; doping profiles; elemental semiconductors; phosphorus; segregation; semiconductor device models; semiconductor doping; silicon; silicon compounds; LSI device; Si:P-SiO2; SiO2-Si interface; dopant distribution; p-channel MOSFET; phosphorus pile-up; segregation; simulation model; Annealing; Fabrication; Impurities; Laboratories; Large scale integration; MOSFETs; Oxidation; Semiconductor process modeling; Temperature dependence; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865258
