Modeling and simulation of oxygen precipitation in Si: precipitate-point defect interactions and influence of hydrogen

Author

Senkader, S. ; Hobler, G. ; Schmeiser, C.

Author_Institution

Inst. fur Solid-State Electron., Tech. Univ. Wien, Austria

fYear

1996

fDate

2-4 Sept. 1996

Firstpage

31

Lastpage

32

Abstract

In this work we present recent model developments which describes the precipitation of oxygen and the formation of stacking faults simultaneously in Czochralski-silicon wafers using rate- and Fokker-Planck equations. We have improved the model to consider the influence of vacancies on precipitation in addition that of self interstitials. A partitioning between vacancies and self interstitials is obtained by assuming that the system always seeks its minimum energy configuration. We additionally report our attempt to model the influence of hydrogen on oxygen precipitation.

Keywords

Fokker-Planck equation; elemental semiconductors; hydrogen; oxygen; point defects; precipitation; silicon; stacking faults; Czochralski silicon wafer; Fokker-Planck equation; Si:O,H; hydrogen; model; oxygen precipitation; precipitate-point defect interaction; rate equation; self interstitial; simulation; stacking fault; vacancy; Annealing; Capacitive sensors; Gettering; Hydrogen; Oxygen; Silicon; Solid state circuits; Stacking; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Print_ISBN

0-7803-2745-4

Type

conf

DOI

10.1109/SISPAD.1996.865259

Filename

865259