DocumentCode
2367571
Title
Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect
Author
López, Toni ; Elferich, Reinhold ; Koper, Nick
Author_Institution
Philips Res. Labs., Aachen
fYear
2006
fDate
4-8 June 2006
Firstpage
1
Lastpage
4
Abstract
Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena
Keywords
MOSFET; finite element analysis; low-power electronics; semiconductor device models; body diode turn-off; body-effect; circuit simulator; finite element simulations; gate voltage dependency; high density trench MOSFET; reverse recovery transients; Analytical models; Circuit simulation; Finite element methods; Laboratories; Low voltage; MOSFETs; Predictive models; Semiconductor diodes; Threshold voltage; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location
Naples
Print_ISBN
0-7803-9714-2
Type
conf
DOI
10.1109/ISPSD.2006.1666076
Filename
1666076
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