Title :
Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect
Author :
López, Toni ; Elferich, Reinhold ; Koper, Nick
Author_Institution :
Philips Res. Labs., Aachen
Abstract :
Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena
Keywords :
MOSFET; finite element analysis; low-power electronics; semiconductor device models; body diode turn-off; body-effect; circuit simulator; finite element simulations; gate voltage dependency; high density trench MOSFET; reverse recovery transients; Analytical models; Circuit simulation; Finite element methods; Laboratories; Low voltage; MOSFETs; Predictive models; Semiconductor diodes; Threshold voltage; Transient analysis;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666076
