Title :
Effect of channel length on NBTI in sub-100nm CMOS technology
Author :
Jin, Lei ; Xu, Mingzhen
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
The channel length dependence of NBTI degradation in a sub-100 nm CMOS technology is studied. It is shown that the enhanced interface trap generation near the gate edge is primarily responsible for the channel length dependence of NBTI degradation. The possible contribution of oxide charges, although may not be ruled out, plays a less important role.
Keywords :
CMOS integrated circuits; integrated circuit reliability; interface states; CMOS technology; channel length; enhanced interface trap generation; negative bias temperature instability; oxide charges; CMOS technology; Nanoelectronics; Niobium compounds; Titanium compounds;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585558
