• DocumentCode
    2367651
  • Title

    Two-Carrier Current Saturation in a Lateral Dmos

  • Author

    Lin, John ; Hower, Philip L.

  • Author_Institution
    Texas Instruments Inc., Manchester, NH
  • fYear
    2006
  • fDate
    4-8 June 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Conventional Ldmos transistors suffer from drain current "compression" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by suppressing the parasitic bipolar transistor, an unusual "expansion" in the drain characteristic emerges. This new device behavior is described and a mechanism for the "expansion" proposed
  • Keywords
    MOSFET; carrier mobility; semiconductor device reliability; Ldmos transistors; drain current; lateral Dmos; parasitic bipolar transistor; two-carrier current saturation; Bipolar transistors; Current density; Electrons; Impact ionization; Instruments; Kirk field collapse effect; Physics; Resistors; Semiconductor optical amplifiers; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
  • Conference_Location
    Naples
  • Print_ISBN
    0-7803-9714-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.2006.1666078
  • Filename
    1666078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2367651