DocumentCode
2367664
Title
Nanophotodetector array for near-field nano-imaging
Author
Liu, Boyang ; Huang, Yingyan ; Kim, Ki Young ; Ho, Sen-Tiong
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
fYear
2008
fDate
24-27 March 2008
Firstpage
607
Lastpage
609
Abstract
A novel near-field nano-imaging device based on nanophotodetector (NPD) array is presented. Simulation shows the smallest obtainable resolution is 150 nm for 1.55 mum wavelength. Various photolithography, e-beam lithography, wafer bonding and etching back techniques have been developed to realize the thin-film based photodetector structures. A slab version NPD device has been successfully fabricated. The smallest pixel size is as small as 100 nm.
Keywords
electron beam lithography; etching; image sensors; nanolithography; photodetectors; photolithography; thin film devices; wafer bonding; e-beam lithography; etching back techniques; nanophotodetector array; near-field nano-imaging device; photolithography; thin-film based photodetector structures; wafer bonding; Nanoelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585560
Filename
4585560
Link To Document