Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

Author

Yokoyama, M. ; Iida, R. ; Kim, S.H. ; Taoka, N. ; Urabe, Y. ; Yasuda, T. ; Takagi, H. ; Yamada, H. ; Fukuhara, N. ; Hata, M. ; Sugiyama, M. ; Nakano, Y. ; Takenaka, M. ; Takagi, S.

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2010

fDate

6-8 Dec. 2010

Abstract

We have demonstrated extremely-thin-body (ETB) (3.5 and 9 nm) InGaAs-on-insulator (InGaAs-OI) MOSFETs on Si substrates with Al₂O₃ ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding (DWB). We have found that the ETB highly-doped InGaAs-OI n-channel MOSFETs without p-n junction can perform a normal MOSFET operation under front- and back-gate configuration and the double-gate operation can provide excellent on-current/off-current (I_on/I_off) properties of ~10⁷ and the improved S factor even for InGaAs-OI MOSFETs with N_D of 1×10¹⁹ cm^-3.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; buried layers; elemental semiconductors; gallium arsenide; indium compounds; silicon; wafer bonding; Al₂O₃; InGaAs; InGaAs-on-insulator; Si; Si substrates; UTBOX layers; back-gate configuration; direct wafer bonding; extremely-thin-body; front-gate configuration; n-channel MOSFET; size 3.5 nm; size 9 nm; ultrathin buried oxide layers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703286

Filename

5703286