DocumentCode :
2367688
Title :
Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding
Author :
Yokoyama, M. ; Iida, R. ; Kim, S.H. ; Taoka, N. ; Urabe, Y. ; Yasuda, T. ; Takagi, H. ; Yamada, H. ; Fukuhara, N. ; Hata, M. ; Sugiyama, M. ; Nakano, Y. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
We have demonstrated extremely-thin-body (ETB) (3.5 and 9 nm) InGaAs-on-insulator (InGaAs-OI) MOSFETs on Si substrates with Al2O3 ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding (DWB). We have found that the ETB highly-doped InGaAs-OI n-channel MOSFETs without p-n junction can perform a normal MOSFET operation under front- and back-gate configuration and the double-gate operation can provide excellent on-current/off-current (Ion/Ioff) properties of ~107 and the improved S factor even for InGaAs-OI MOSFETs with ND of 1×1019 cm-3.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; buried layers; elemental semiconductors; gallium arsenide; indium compounds; silicon; wafer bonding; Al2O3; InGaAs; InGaAs-on-insulator; Si; Si substrates; UTBOX layers; back-gate configuration; direct wafer bonding; extremely-thin-body; front-gate configuration; n-channel MOSFET; size 3.5 nm; size 9 nm; ultrathin buried oxide layers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703286
Filename :
5703286
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2367688
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