Title :
Accurate Large-Signal Modeling of AlGaN-GaN HEMT Including Trapping and Self-Heating Induced Dispersion
Author :
Jarndal, Anwar ; Bunz, Bernd ; Kompa, Gunter
Author_Institution :
Kassel Univ.
Abstract :
An accurate large-signal model for AlGaN-GaN HEMT is presented. This model is derived from a distributed small-signal model that efficiently describes the physics of the device. An improved drain current model accounts for trapping and self-heating effects is implemented. The model shows very good results for simulating the high-power operation of a 8times125mum gate width AlGaN-GaN HEMT even beyond the 1-dB gain compression point
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT devices; distributed small-signal model; drain current model; high-power operation; large-signal modeling; self-heating effects; trapping effects; Aluminum gallium nitride; Capacitance; Dispersion; Electric breakdown; Gallium nitride; HEMTs; Heating; High power amplifiers; Physics; Pulse measurements; GaN HEMT; high power device; large-signal model;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666080
