DocumentCode :
2367696
Title :
Size effect in Cu nano-interconnects and its implication on electromigration
Author :
Hou, Yuejin ; Tan, Cher Ming
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
610
Lastpage :
613
Abstract :
With the interconnect dimensions approaching the length of the mean free path (MFP) of the electron, size effects are becoming important. This is manifested in the increase of the resistivity for nano-interconnects. This change in the electrical properties will pose new challenges in the EM performance for Cu nano-interconnects.
Keywords :
integrated circuit interconnections; nanoelectronics; Cu; EM performance; electromigration; mean free path; nanointerconnects; size effect; Conductivity; Dielectrics; Electromigration; Electrons; Grain boundaries; Integrated circuit interconnections; Material properties; Matter waves; Particle scattering; Transistors; Electromigration; Nano-interconnect; Size effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585561
Filename :
4585561
Link To Document :
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