Title :
Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substrate
Author :
Harada, S. ; Kato, M. ; Okamoto, M. ; Yatsuo, T. ; Fukuda, K. ; Arai, K.
Author_Institution :
Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
The inversion channel IEMOSFET has been fabricated on the 4H-SiC carbon-face substrate. The channel resistance was successfully reduced to 1 mOmegacm2 due to the high inversion channel mobility on the carbon-face epitaxial layer. The extremely low specific on-resistance of 2.7 mOmegacm2 was achieved with the blocking voltage of 700V. This specific on-resistance is the lowest in the normally-off MOSFET with the blocking voltage higher than 600 V
Keywords :
MOSFET; carbon; carrier mobility; silicon compounds; wide band gap semiconductors; 700 V; SiC; carbon-face substrate; channel resistance; inversion channel IEMOSFET; inversion channel mobility; Electronics industry; Epitaxial layers; Fabrication; MOSFET circuits; Power MOSFET; Power electronics; Silicon carbide; Substrates; Textile industry; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666087
