Title :
A self protecting RF output with 2 kV HBM hardness
Author :
Langguth, Gernot ; Gossmann, Timo ; Rauch, Stefan ; Kreppold, Bernd ; Wendel, Martin
Author_Institution :
Infineon Technol. AG, Neubiberg
Abstract :
The present work focuses on the ESD protection of an RF output stage which consists of a fully silicided NMOS stack of mixed device type in a 2.8 V domain. The application of co-design measures improves the ESD hardness from 250 V to 2 kV HBM.
Keywords :
CMOS integrated circuits; electrostatic discharge; radiofrequency integrated circuits; ESD protection; HBM hardness; RF CMOS circuits; self protecting RF output; silicided NMOS stack; voltage 2 kV; voltage 2.8 V; CMOS technology; Circuit topology; Coils; Diodes; Electrostatic discharge; MOS devices; Protection; Radio frequency; Variable structure systems; Voltage;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401726
