Thin film heterostructure based on nano-polyaniline and porous silicon

Heterojunction between n-type nanopoly-aniline and p-type porous silicon was fabricated chemically by in-situ polymerization method. Our method leads to excellent coverage of polyanilne and forming of homogenous polyaniline film upon the porous silicon wafer. The composition and morphology of the nano-polymer were confirmed by FTIR, SEM, UV-visible and TEM. Different parameters of heterojunction such as ideality factor, barrier height and series resistance values were calculated from I-V measurements at different temperature range. Ideality factor value indicated that NPANI/PSi SBD represents a non-ideal diode. The series resistance values are decreased with increasing temperature. The results also indicated that the polymerization took place throughout the porous layer.