Title :
Multi-band Monte Carlo method using anisotropic-analytical multi-band model
Author :
Yamaji, M. ; Taniguchi, K. ; Hamaguchi, C.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Fabrication of Si MOSFET´s with a 0.1-μm order gate length has now started. The Monte Carlo (MC) method is recognised as the most powerful simulation technique for devices of this size. In this paper we propose a new anisotropic-analytical band model, and we develop a multi-band MC simulator using this model to investigate hot carrier transport in real space.
Keywords :
MOSFET; Monte Carlo methods; hot carriers; semiconductor device models; 0.1 micron; MOSFET; Monte Carlo method; Si; anisotropic-analytical multi-band model; device simulation; hot carrier transport; Analytical models; Anisotropic magnetoresistance; Computational modeling; Effective mass; Electrons; Equations; Laboratories; Predictive models; Silicon; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865275
