Title :
Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation
Author :
Jungemann, Chr ; Decker, Stefan ; Thoma, R. ; Eng, W.L. ; Goto, H.
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
In this abstract we describe a new Multiple Refresh (MR) technique for Monte Carlo (MC) device simulation which is an improved version of a method developed for bulk simulations. The purpose of this method is to enhance statistics of rare events (e.g. impact ionisation, oxide injection) without increasing the number of common events (i.e. low energetic particles). The MR technique allows to control directly the stochastic noise of the MC simulation in predefined regions of phase space by maintaining a given number of particles in these regions. We apply the method to an LDD-NMOSFET.
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; LDD-NMOSFET; Monte Carlo device simulation; impact ionisation; oxide injection; phase space multiple refresh; statistical enhancement; stochastic noise; Impact ionization; Monte Carlo methods; Neodymium; Noise reduction; Phase noise; Poisson equations; Postal services; Semiconductor device noise; Statistics; Stochastic resonance;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865276
