Title :
High Current Gain Silicon Carbide Bipolar Power Transistors
Author :
Domeij, Martin ; Lee, Hyung-Seok ; Zetterling, Carl-Mikael ; Östling, Mikael ; Schöner, Adolf
Author_Institution :
KTH R. Inst. of Technol., Stockholm
Abstract :
Silicon carbide NPN bipolar junction transistors were fabricated and a current gain exceeding 60 was obtained for a BJT with a breakdown voltage BVCEO=1100 V. A reduction of the current gain was observed after contact annealing at 950 degC and this was attributed to degradation of the oxide passivation. Device simulations with varying emitter doping resulted in a maximum current gain for an emitter doping around 1middot10 cm19. Resistive turn-off measurements were performed and a minimum collector-emitter voltage (VCE) rise-time of 40 ns was found. The VCE rise-time showed a clear dependence on the on-state base current thus indicating a significant stored charge
Keywords :
annealing; p-n junctions; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor doping; silicon compounds; wide band gap semiconductors; 1100 V; 40 ns; 950 C; NPN bipolar junction transistors; contact annealing; current gain; emitter doping; oxide passivation; silicon carbide; Doping; Epitaxial layers; MOSFETs; Nitrogen; Performance evaluation; Performance gain; Power transistors; Silicon carbide; Substrates; Voltage; bandgap narrowing; bipolar junction transistor; current gain; silicon carbide; surface recombination;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666091
