Title :
Voltage overshoot study in 20V DeMOS-SCR devices
Author :
Vashchenko, V.A. ; Jansen, Ph. ; Scholz, M. ; Hopper, P. ; Sawada, M. ; Nakaei, T. ; Hasebe, T. ; Thijs, S.
Author_Institution :
Nat. Semicond. Corp., Santa Clara
Abstract :
Based upon measurements of the HBM waveforms of DeMOS-SCR devices, the voltage overshoot during turn-on is studied as a function of device architecture and gate sub-circuit. It has been demonstrated that, in general, the overshoot voltage does not correlate to the TLP triggering voltage, but can be controlled in a wide range both at the device level and at the gate sub-circuit level by modifying blocking junction breakdown voltage, gate coupling and displacement current density in the internal parasitic BJT.
Keywords :
MIS devices; bipolar transistors; current density; overvoltage; power semiconductor devices; rectifiers; DeMOS-SCR devices; HBM waveforms; TLP triggering voltage; blocking junction breakdown voltage; device architecture; displacement current density; gate coupling; gate sub-circuit; internal parasitic BJT; voltage overshoot study; Breakdown voltage; Clamps; Current density; Electrostatic discharge; Protection; Pulse measurements; Semiconductor optical amplifiers; Thyristors; Topology; Voltage control;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401731
