Title :
Analysis of Dynamic Avalanche Phenomenon of PiN Diode Using He Ion Irradiation
Author :
Misumi, Tadashi ; Nakagaki, Shinji ; Yamaguchi, Masakazu ; Sugiyama, Koichi ; Hirahara, Fumio ; Nishiwaki, Katsuhiko
Author_Institution :
Electron. Eng. Div. III, Toyota Motor Corp., Aichi
Abstract :
The purpose of this paper is to analyze the dynamic avalanche phenomenon of conventional PiN diodes using He ion irradiation. In conventional PiN diodes, the avalanche occurs during reverse recovery operation under high voltage and low temperature conditions, resulting in two peaks and high frequency oscillation in the recovery current. The two peaks in the current were reproduced by a simulation that introduces hole trap levels. It was also confirmed that the phenomenon can be suppressed by lowering the density of the trap levels or the minority carrier lifetime of the bulk wafer
Keywords :
avalanche breakdown; carrier lifetime; hole traps; p-i-n diodes; radiation effects; semiconductor device breakdown; semiconductor device models; PiN diode; dynamic avalanche phenomenon analysis; ion irradiation; minority carrier lifetime; reverse recovery operation; trap levels; Charge carrier lifetime; Diodes; Doping; Frequency; Helium; Insulated gate bipolar transistors; Inverters; Low voltage; Temperature; Vehicle dynamics;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666092
