• DocumentCode
    236796
  • Title

    Modeling of carbon nanotube-metal contact losses in electronic devices

  • Author

    Elkadi, Asmaa ; El-Ghazaly, Samir M.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
  • fYear
    2014
  • fDate
    4-8 Aug. 2014
  • Firstpage
    198
  • Lastpage
    202
  • Abstract
    In this paper, we introduce an efficient approach to estimate the losses of carbon nanotube-based devices. The approach is based on realistic operational parameters beyond quantum limits. It calculates the electric resistance and conductance for different devices with different numbers of carbon nanotubes. The model shows good agreement with experimental data. An efficient approach to estimate the number of nanotubes per device has also been developed. The model can be easily implemented in commercial simulators.
  • Keywords
    carbon nanotubes; contact resistance; electric admittance; nanotube devices; semiconductor device models; C; carbon nanotube based devices; carbon nanotube-metal contact losses; electric conductance; electric resistance; electronic devices; operational parameters; quantum limits; Carbon nanotubes; Conductivity; Contact resistance; Electrical resistance measurement; Mathematical model; Resistance; Contact resistance; losses; semiconducting single-wall carbon nanotube;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility (EMC), 2014 IEEE International Symposium on
  • Conference_Location
    Raleigh, NC
  • Print_ISBN
    978-1-4799-5544-2
  • Type

    conf

  • DOI
    10.1109/ISEMC.2014.6898969
  • Filename
    6898969