Characterization of Unconventional Engineering Solutions for Superjunction Devices

Superjunction devices are nowadays fabricated based on multi-epitaxy depositions of n-type layers and subsequent masked p-implantations. Improving the performance of the devices requires the optimization of the fabrication process. In this paper, two new approaches to the superjunction technology, based on proton implantations and on the implantation of boron at a very high energies, have been characterized by dopant profiling techniques and compared with process simulation