Title :
A practical sputter equipment simulation system for aluminum including surface diffusion model
Author :
Yamada, H. ; Ohta, T. ; Kaneko, H. ; Yamada, Y.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
We have developed a practical aluminum sputter deposition system which is composed of a trajectory calculation module using the Monte Carlo (MC) method, a surface diffusion calculation module, and a deposition profile module using a ´modified´ QAS (quasi-axis-symmetrical) approximation. In the system, the string model is utilized as the common data structure for simplifying the interface. The simulated profiles (after adjustment of surface diffusion coefficient) agree with the experiments. The surface diffusion model is found to be indispensable for aluminum. The adjusted surface diffusion coefficient with the activation energy of 12.4 (kJ/mole) is found about one million times as large as the bulk at 573 K.
Keywords :
aluminium; digital simulation; integrated circuit metallisation; semiconductor process modelling; sputter deposition; surface diffusion; 573 K; Al; Monte Carlo method; activation energy; deposition profile module; equipment simulation system; quasi-axis-symmetrical approximation; sputter equipment; string model; surface diffusion coefficient; surface diffusion model; trajectory calculation module; Aluminum; Computational modeling; Data structures; Laboratories; National electric code; Production; Semiconductor device modeling; Semiconductor process modeling; Sputtering; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865280
