Title :
Periodic nanoscale Si structures by ion beam induced glancing angle deposition
Author :
Rauschenbach, B. ; Patzig, C.
Author_Institution :
Leibniz-Inst. fur Oberflachenmodifizierung, Leipzig
Abstract :
The dot and ripple surface topography emerging on Si, Ge and compound semiconductor surfaces during low-energy (les 2000 eV) noble gas ion beam erosion at oblique ion incidence is studied. The results show that there is a much more complex behavior of the surface topography with ion energy, ion fluence, angle of incidence, etc.
Keywords :
elemental semiconductors; germanium; ion beam assisted deposition; nanostructured materials; silicon; surface topography; Ge; Si; erosion; ion beam induced glancing angle deposition; nanoscale Si structures; semiconductor surfaces; surface topography; Ion beams; Ion sources; Nanoelectronics; Nanostructures; Periodic structures; Spirals;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585574
