Computational performance of level set methods for etching, deposition, and lithography development

Author

Adalsteinsson, D. ; Sethian, J.A.

Author_Institution

Dept. of Math., California Univ., Berkeley, CA, USA

fYear

1996

fDate

2-4 Sept. 1996

Firstpage

79

Lastpage

80

Abstract

The application of level set techniques to problems of two and three dimensional surface evolution in etching, deposition, and lithography development have been described. The techniques are robust, accurate, unbreakable, and extremely fast, and can be applied to highly complex two and three dimensional surface topography evolutions, including sensitive flux/visibility integration laws, simultaneous etching and deposition, effects of non-convex sputter laws demonstrating faceting, as well as ion-sputtered re-deposition and re-emission with low sticking coefficients, and surface diffusion. In this paper, we will focus on efficient algorithms for some of the most complex problems, and discuss the computational requirements and performance of these techniques.

Keywords

etching; integral equations; photolithography; semiconductor technology; sputter deposition; surface diffusion; surface topography; computational requirements; etching; faceting; flux/visibility integration; ion-sputtered redeposition; level set methods; lithography; nonconvex sputter laws; sticking coefficients; surface diffusion; surface evolution; surface topography; Integral equations; Level set; Lithography; Mathematics; Partial differential equations; Plasma applications; Plasma density; Robustness; Sputter etching; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Print_ISBN

0-7803-2745-4

Type

conf

DOI

10.1109/SISPAD.1996.865281

Filename

865281