Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor

Author

Pramanik, C. ; Islam, T. ; Saha, H. ; Bhattacharya, J. ; Banerjee, S. ; Dey, S.

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

235

Lastpage

240

Abstract

Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20°C to 80°C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA. A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.

Keywords

field programmable gate arrays; micromechanical devices; piezoresistive devices; pressure sensors; ADC; FPGA; MEMS pressure sensor; constant current generator; instrumentation amplifier; nonlinear temperature dependence; piezoresistive pressure sensor; porous silicon; signal conditioning analog circuit; smart pressure sensor; testing; Circuit simulation; Circuit testing; Fabrication; Field programmable gate arrays; Intelligent sensors; Micromechanical devices; Piezoresistance; Silicon; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 2005. 18th International Conference on

ISSN

1063-9667

Print_ISBN

0-7695-2264-5

Type

conf

DOI

10.1109/ICVD.2005.77

Filename

1383282