Title :
Tunable diode protection for GMR and TMR sensors
Author :
Iben, Icko Eric Timothy ; Czarnecki, Stanley ; Herget, Philipp
Author_Institution :
IBM Almaden Res. Center, San Jose
Abstract :
TMR and GMR sensors used today are highly susceptible to ESD damage with failure voltages as low as 0.5 V. Diode protection using a single diode connected in parallel with the sensor does not work for many advanced MR sensors due to the fact that the voltage at which diodes begin conducting significant current exceeds the damage voltage of many advanced MR sensors. This is due to limitations of the band gaps of the diode materials (Si and Ge) and the resistance of the diodes while conducting. Here we report several novel diode protection circuits which enable protecting the most sensitive devices while tuning the circuits to the electrical characteristics of the particular sensor being used.
Keywords :
diodes; giant magnetoresistance; magnetic tunnelling; damage voltage; giant magnetoresistive; magnetoresistive sensors; tunable diode protection; tunnel junction magnetoresistive; Circuit optimization; Conducting materials; Diodes; Electric resistance; Electrostatic discharge; Low voltage; Photonic band gap; Protection; Sensor phenomena and characterization; Tunable circuits and devices;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401741
