DocumentCode
2368075
Title
Influence of Layout Geometries on the Behavior of 4H-SiC 600V Merged PiN Schottky (MPS) Rectifiers
Author
d´Alessandro, Vincenzo ; Irace, A. ; Breglio, G. ; Spirito, P. ; Bricconi, A. ; Carta, R. ; Raffo, D. ; Merlin, L.
Author_Institution
Dept. of Electron. & Telecommun. Eng., Naples Univ. "Federico II"
fYear
2006
fDate
4-8 June 2006
Firstpage
1
Lastpage
4
Abstract
The overall behavior of 4H-SiC 600V merged PiN Schottky (MPS) rectifiers is analyzed by means of 2-D numerical simulations. The influence of the elementary cell topology on both forward and reverse characteristics is exhaustively investigated. It is demonstrated that MPS diodes are not affected by thermally-induced voltage surge phenomena that arise in their state-of-the-art pure Schottky counterparts
Keywords
Schottky diodes; p-i-n diodes; semiconductor device models; silicon compounds; solid-state rectifiers; 2D numerical simulations; 600 V; MPS rectifiers; SiC; elementary cell topology; layout geometries; merged PiN Schottky rectifiers; Analytical models; Current measurement; Electric breakdown; Geometry; Motor drives; Numerical analysis; P-n junctions; Rectifiers; Schottky diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location
Naples
Print_ISBN
0-7803-9714-2
Type
conf
DOI
10.1109/ISPSD.2006.1666097
Filename
1666097
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