Investigation of carrier streaming effect for the low spike fast IGBT turn-off

Author

Onozawa, Y. ; Otsuki, M. ; Seki, Y.

Author_Institution

Fuji Electr. Device Technol. Co., Ltd., Matsumoto

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

This paper describes the investigation of the IGBT turn-off phenomena especially focused on the di/dt controlling in order to suppress the spike voltage. The design concepts for improvement of the trade-off relationship between the turn-off power dissipation and the spike voltage are represented. The new turn-off di/dt control method, the combination of the smaller gate resistance and controlling the collector injection efficiency, has been able to realize about 30% reduction in the turn-off energy compared to the conventional method, under the condition of the same spike voltage

Keywords

insulated gate bipolar transistors; voltage control; IGBT turn-off phenomena; carrier streaming effect; collector injection efficiency; gate resistance; spike voltage; turn-off di/dt control method; turn-off power dissipation; Bipolar transistors; Inductance; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Motor drives; Power dissipation; Traction power supplies; Transient analysis; Voltage control; Spike voltage; Turn-off di/dt control; collector injection efficiency; excess carrier; swept-out current;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666099

Filename

1666099