Title :
Investigation of carrier streaming effect for the low spike fast IGBT turn-off
Author :
Onozawa, Y. ; Otsuki, M. ; Seki, Y.
Author_Institution :
Fuji Electr. Device Technol. Co., Ltd., Matsumoto
Abstract :
This paper describes the investigation of the IGBT turn-off phenomena especially focused on the di/dt controlling in order to suppress the spike voltage. The design concepts for improvement of the trade-off relationship between the turn-off power dissipation and the spike voltage are represented. The new turn-off di/dt control method, the combination of the smaller gate resistance and controlling the collector injection efficiency, has been able to realize about 30% reduction in the turn-off energy compared to the conventional method, under the condition of the same spike voltage
Keywords :
insulated gate bipolar transistors; voltage control; IGBT turn-off phenomena; carrier streaming effect; collector injection efficiency; gate resistance; spike voltage; turn-off di/dt control method; turn-off power dissipation; Bipolar transistors; Inductance; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Motor drives; Power dissipation; Traction power supplies; Transient analysis; Voltage control; Spike voltage; Turn-off di/dt control; collector injection efficiency; excess carrier; swept-out current;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666099
