DocumentCode :
2368156
Title :
Three-dimensional photoresist exposure and development simulation
Author :
Kirchauer, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
fYear :
1996
fDate :
2-4 Sept. 1996
Firstpage :
99
Lastpage :
100
Abstract :
Among all technologies photolithography holds the leading position in pattern transfer in today´s semiconductor industry. The reduction of the lithographic feature sizes towards or even beyond the used wavelength and the increasing nonplanarity of devices create complicated problems for the lithography process. A three-dimensional photolithography simulator including mask illumination, resist exposure and resist development is a cost effective tool for further improvements. We present a complete three-dimensional simulation model focusing on the resist exposure and resist development step.
Keywords :
digital simulation; masks; photoresists; semiconductor process modelling; development simulation; feature sizes; mask illumination; nonplanarity; pattern transfer; photoresist exposure; resist development; resist exposure; semiconductor industry; three-dimensional photoresist; Costs; Etching; Frequency domain analysis; Lighting; Lithography; Maxwell equations; Nonlinear optics; Optical surface waves; Resists; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
Type :
conf
DOI :
10.1109/SISPAD.1996.865291
Filename :
865291
Link To Document :
بازگشت