DocumentCode
2368156
Title
Three-dimensional photoresist exposure and development simulation
Author
Kirchauer, H. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Austria
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
99
Lastpage
100
Abstract
Among all technologies photolithography holds the leading position in pattern transfer in today´s semiconductor industry. The reduction of the lithographic feature sizes towards or even beyond the used wavelength and the increasing nonplanarity of devices create complicated problems for the lithography process. A three-dimensional photolithography simulator including mask illumination, resist exposure and resist development is a cost effective tool for further improvements. We present a complete three-dimensional simulation model focusing on the resist exposure and resist development step.
Keywords
digital simulation; masks; photoresists; semiconductor process modelling; development simulation; feature sizes; mask illumination; nonplanarity; pattern transfer; photoresist exposure; resist development; resist exposure; semiconductor industry; three-dimensional photoresist; Costs; Etching; Frequency domain analysis; Lighting; Lithography; Maxwell equations; Nonlinear optics; Optical surface waves; Resists; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865291
Filename
865291
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