DocumentCode
2368180
Title
Hot carrier energy distributions in short channel MOSFETs and the persistence of substrate currents at low drain voltages
Author
Dyke, D.W. ; Chang, M Y ; Leung, C C C ; Childs, P.A.
Author_Institution
Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
101
Lastpage
102
Abstract
Demonstrates a hybrid Monte Carlo/iterative technique for solving the Boltzmann transport equation and shows it can be used to explain the form of the hot carrier distribution in MOSFETs operating at low drain voltages. We also show that electron-electron interactions near the drain of a MOSFET can account for the persistence of substrate current in MOSFETs operating at low drain voltages and low temperatures.
Keywords
Boltzmann equation; MOSFET; Monte Carlo methods; hot carriers; iterative methods; semiconductor device models; Boltzmann transport equation; drain voltages; electron-electron interactions; hot carrier energy distributions; hybrid Monte Carlo/iterative technique; short channel MOSFETs; substrate current; substrate currents; Charge carrier processes; Hot carrier effects; Hot carriers; Impact ionization; Low voltage; MOSFETs; Phonons; Scattering; Temperature distribution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865294
Filename
865294
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