Title :
Intersubband scattering effects on the carrier velocity of a AlGaAs/GaAs single-well heterostructure
Author :
Ghaffari, O. ; Saghafi, K.
Author_Institution :
Dept. of Electr. Eng., Shahed Univ., Tehran
Abstract :
In this paper, we present an accurate model for scattering rates in a AlGaAs/GaAs single-well heterostructure, based on new extended relations for wave functions and subband levels. In this structure, the wave functions and energy levels of two dimensional electron gas are derived by a variational method. The effect of fourth subband level on the scattering rates and carrier velocity are evaluated by Monte Carlo simulation.
Keywords :
III-V semiconductors; Monte Carlo methods; electromagnetic wave scattering; gallium arsenide; silver compounds; wave functions; Monte Carlo simulation; carrier velocity; intersubband scattering effects; single-well heterostructure; two dimensional electron gas; wave functions; Acoustic scattering; Eigenvalues and eigenfunctions; Electrons; Energy states; Gallium arsenide; Optical scattering; Particle scattering; Poisson equations; Schrodinger equation; Wave functions;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585580
