DocumentCode :
2368193
Title :
Fundamental relation between local and effective transverse field dependent mobility for electrons in inversion channels
Author :
Biesemans, Serge ; De Meyer, Kristin
Author_Institution :
ASP Div., IMEC, Leuven, Belgium
fYear :
1996
fDate :
2-4 Sept. 1996
Firstpage :
103
Lastpage :
104
Abstract :
This paper describes a new modeling approach that relates the local mobility to the experimentally determined macroscopic or effective mobility as a function of the vertical electric field. Using the technique of integral representations it is possible to find a mathematical condition which any local mobility model has to fulfil to be in accordance with experiment. A local mobility model used in a 2D device simulator has to meet this requirement in order to achieve quantitative agreement between experimental and simulated data.
Keywords :
MOSFET; electron mobility; inversion layers; semiconductor device models; 2D device simulator; electron mobility; integral representations; inversion channels; modeling approach; transverse field dependent mobility; vertical electric field; Analytical models; Charge measurement; Current measurement; Electron mobility; Equations; Inspection; Mathematical model; Numerical models; Numerical simulation; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
Type :
conf
DOI :
10.1109/SISPAD.1996.865295
Filename :
865295
Link To Document :
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