Title : 
Fundamental relation between local and effective transverse field dependent mobility for electrons in inversion channels
         
        
            Author : 
Biesemans, Serge ; De Meyer, Kristin
         
        
            Author_Institution : 
ASP Div., IMEC, Leuven, Belgium
         
        
        
        
        
        
            Abstract : 
This paper describes a new modeling approach that relates the local mobility to the experimentally determined macroscopic or effective mobility as a function of the vertical electric field. Using the technique of integral representations it is possible to find a mathematical condition which any local mobility model has to fulfil to be in accordance with experiment. A local mobility model used in a 2D device simulator has to meet this requirement in order to achieve quantitative agreement between experimental and simulated data.
         
        
            Keywords : 
MOSFET; electron mobility; inversion layers; semiconductor device models; 2D device simulator; electron mobility; integral representations; inversion channels; modeling approach; transverse field dependent mobility; vertical electric field; Analytical models; Charge measurement; Current measurement; Electron mobility; Equations; Inspection; Mathematical model; Numerical models; Numerical simulation; Semiconductor devices;
         
        
        
        
            Conference_Titel : 
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
         
        
            Print_ISBN : 
0-7803-2745-4
         
        
        
            DOI : 
10.1109/SISPAD.1996.865295