Title :
Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology
Author :
Vershinin, K. ; Sweet, M. ; Ngwendson, L. ; Thomson, Jim ; Waind, P. ; Bruce, J. ; Narayanan, Sankara E M
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
Abstract :
For the first time, we present experimental results of a trench clustered IGBT structures fabricated in 1.2kV non-punch-through technology. Experimental results demonstrate significantly low forward voltage drop in comparison to trench IGBTs in the same technology. Furthermore, results show that the use of dummy cells in the TCIGBT device can improve the trade-off between the on-state and turn-off losses
Keywords :
insulated gate bipolar transistors; 1.2 kV; TCIGBT device; dummy cells; low forward voltage drop; non punch through technology; on-state losses; trench clustered IGBT structures; trench clustered insulated gate bipolar transistor; turn-off losses; Cathodes; Fabrication; Insulated gate bipolar transistors; Insulation; Low voltage; MOSFETs; Packaging; Silicon on insulator technology; Textile industry; Thyristors;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666102
