DocumentCode
2368198
Title
Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain
Author
Manouvrier, Jean-Robert ; Fonteneau, Pascal ; Legrand, Charles-Alexandre ; Nouet, Pascal ; Azaïs, Florence
Author_Institution
STMicroelectron., Crolles
fYear
2007
fDate
16-21 Sept. 2007
Abstract
A measurement setup for the characterization of very fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65 nm and 130 nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.
Keywords
bipolar transistors; electrostatic discharge; semiconductor diodes; time-domain analysis; transient response; BJT; CDM time domain; CMOS technology; ESD protection diode; STI diodes; charged device model; gated diodes; guard ring; transient behavior; transient responses; CMOS technology; Diodes; Electrostatic discharge; Oscilloscopes; Power system transients; Probes; Pulse generation; Pulse measurements; Sampling methods; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location
Anaheim, CA
Print_ISBN
978-1-58537-136-5
Type
conf
DOI
10.1109/EOSESD.2007.4401748
Filename
4401748
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