DocumentCode :
2368208
Title :
Ab initio study of ferromagnetism in N doped ZnO and its stabilization by Li co-doping
Author :
Wu, Q.Y. ; Wu, R. ; Chen, Z.G. ; Lin, Y.B. ; Zhang, J.M. ; Huang, Z.G.
Author_Institution :
Dept. of Phys., Fujian Normal Univ., Fuzhou
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
700
Lastpage :
703
Abstract :
Spin-resolved electronic properties of N doped ZnO is investigated from ab initio calculations based on density functional theory (DFT). It is found that single N atom at O site in ZnO becomes spin polarized with its many neighboring atoms with a total magnetic moment of 1.0 muB. Band structure of ZnO doped with 6.25% of N shows a half metallic character with hole states in the minority channel. Though the ferromagnetic coupling is weak in the system, Li co-doping greatly enhance the ferromagnetism. The results of our calculations suggest the possibility of fabricating ZnO based DMS by (N, Li) co-doping.
Keywords :
II-VI semiconductors; ab initio calculations; band structure; density functional theory; electron spin polarisation; ferromagnetic materials; lithium; magnetic moments; nitrogen; semiconductor doping; semimagnetic semiconductors; weak ferromagnetism; wide band gap semiconductors; zinc compounds; DFT; DMS; ZnO:N,Li; ab initio calculations; band structure; density functional theory; diluted magnetic semiconductor; half metallic state; hole states; magnetic moment; minority channel; nitrogen-lithium codoping; spin polarization; spin-resolved electronic property; weak ferromagnetic coupling; Density functional theory; Electrons; Gallium nitride; Land surface temperature; Magnetic semiconductors; Magnetoelectronics; Polarization; Semiconductor impurities; Stationary state; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585581
Filename :
4585581
Link To Document :
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