A 75 V Lateral IGBT for Junction-Isolated Smart Power Technologies

Author

Bakeroot, B. ; Doutreloigne, J. ; Moens, Peter

Author_Institution

ELIS-TFCG/IMEC, Ghent Univ.

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

A 75 V, lateral insulated gate bipolar transistor (LIGBT) is demonstrated in a junction-isolated technology. This device is implemented in a standard smart power technology with a 0.35mum CMOS core. The nLIGBT exhibits a fourfold increase in current density compared to a nVDEMOS in the same technology. A double buried layer structure effectively suppresses substrate currents, provides the floating capability (the nLIGBT can be used as a high-side switch), ensures high latching currents, and yields fast switching speeds

Keywords

current density; insulated gate bipolar transistors; isolation technology; power MOSFET; 0.35 micron; 75 V; CMOS core; LIGBT; current density; double buried layer structure; junction-isolated technology; lateral IGBT; lateral insulated gate bipolar transistor; smart power technology; Anodes; CMOS technology; Cathodes; Current density; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Silicon; Substrates; Voltage; insulated gate bipolar transistor (IGBT); junction-isolated technology; lateral IGBT (LIGBT); power semiconductor devices; switching transient;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666106

Filename

1666106