Title :
Analytical current conduction model for accumulation-mode SOI PMOS devices
Author :
Su, K.W. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. This paper reports a compact analytical current conduction model for short-channel accumulation-mode SOI PMOS devices. Based on the study, the current conduction mechanism in a short-channel accumulation-mode SOI PMOS device is different from that in a long-channel one. As verified by the experimental data, the compact analytical model considering channel length modulation and pre-pinchoff velocity saturation gives an accurate prediction of the drain current characteristics.
Keywords :
MOSFET; electric current; semiconductor device models; silicon-on-insulator; SOI PMOS devices; Si; accumulation-mode PMOS devices; analytical current conduction model; channel length modulation; compact analytical model; drain current characteristics; prepinchoff velocity saturation; short-channel devices; Analytical models; Doping; Flowcharts; MOS devices; Substrates; Thin film devices; Transistors; Very large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865300
