DocumentCode :
2368289
Title :
Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism
Author :
Urabe, Yuji ; Miyata, Noriyuki ; Ishii, Hiroyuki ; Itatani, Taro ; Maeda, Tatsuro ; Yasuda, Tetsuji ; Yamada, Hisashi ; Fukuhara, Noboru ; Hata, Masahiko ; Yokoyama, Masafumi ; Taoka, Noriyuki ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
Channel mobility μeff for InGaAs MISFETs is improved by using the (111)A surface orientation and (NH4)2S treatment. These μeff improvements are associated with negative shifts in Vth and Vfb. We propose that carrier scattering by fluctuated dipoles at the MIS interfaces contributes to μeff for the III-V MISFETs. For the InP MISFETs, the effects of the interface dipoles are not apparent due to their inferior interface quality.
Keywords :
III-V semiconductors; MISFET; electron mobility; indium compounds; semiconductor device manufacture; InGaAs; MISFET; carrier scattering; channel mobility; dipole fluctuation; inferior interface quality; negative shifts; optical correlation; scattering mechanism; surface orientation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703310
Filename :
5703310
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2368289
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