• DocumentCode
    2368346
  • Title

    ESD concerns in sawing wafers with discrete semiconductor devices

  • Author

    Yan, K.P. ; Gaertner, Reinhold ; Wong, C.Y. ; Ng, K.K.

  • Author_Institution
    Infineon Technol. (Malaysia), Melaka
  • fYear
    2007
  • fDate
    16-21 Sept. 2007
  • Abstract
    Wafers with discrete semiconductor devices are sawn without CO2 bubbling. On one hand, there are claims that wafer sawing process using Dl-water without CO2 bubbling is not the state of the art process. On the other hand, there is a major blocking point for the introduction of CO2 bubbling in discrete devices wafer sawing process. Because discrete device wafers have as many as 300K chips on a single 6-inch wafer. Therefore the sawing process requires as long as 2.5 hours to process a wafer. The use of DI water in the sawing process results in severe corrosion issues. Investigations are conducted and the results are presented.semiconductor wafer sawing process
  • Keywords
    electrostatic discharge; sawing; semiconductor device manufacture; ESD concerns; discrete semiconductor devices; semiconductor wafer sawing process; Blades; Brushes; Cleaning; Conductivity; Corrosion; Electrostatic discharge; Grounding; Sawing machines; Semiconductor devices; Shafts;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-58537-136-5
  • Type

    conf

  • DOI
    10.1109/EOSESD.2007.4401754
  • Filename
    4401754