DocumentCode :
2368360
Title :
Preventing arcing damage on radio frequency device wafer by controlling ESD resistivity level of water for saw and wash
Author :
Dela Cruz, W.A. ; Marcelo, M.L.D. ; Borlongan, M.A.B.
Author_Institution :
Intel Technol., Inc., Cavite
fYear :
2007
fDate :
16-21 Sept. 2007
Abstract :
The current electrostatic discharge (ESD) resistivity limit of water during the wafer saw and wash process is found to induce polyimide tribocharging. Accumulated static energy discharges on metal 6 of the Radio Frequency (RF) device, in the form of electrical arcs, cause dielectric passivation layer breakdown and Electrical Overstress (EOS). To solve this problem, an experiment is done to determine the most efficient ESD resistivity level of water for arcing damage prevention.
Keywords :
arcs (electric); electrical resistivity; electrostatic discharge; integrated circuit manufacture; radiofrequency integrated circuits; triboelectricity; ESD resistivity level of water; arcing damage prevention; dielectric passivation layer breakdown; electrical overstress; electrostatic discharge; polyimide tribocharging; radio frequency device wafer; static energy discharges; wafer saw; wash process; Conductivity; Dielectric breakdown; Dielectric devices; Earth Observing System; Electric breakdown; Electrostatic discharge; Passivation; Polyimides; Radio control; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
Type :
conf
DOI :
10.1109/EOSESD.2007.4401755
Filename :
4401755
Link To Document :
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