Title :
Power Cycling at High Temperature Swings of Modules with Low Temperature Joining Technique
Author :
Amro, R. ; Lutz, J. ; Rudzki, J. ; Sittig, R. ; Thoben, M.
Author_Institution :
Chemnitz Univ. of Technol.
Abstract :
Standard packaging and interconnection technologies limit the maximal junction temperature (Tjmax) to about 150degC at present. This restriction is caused by the limited power cycling capabilities of Al bond wires and of soft solder joints. Important applications of power devices, however, require operating temperatures of 175degC or even 200degC. To evaluate the suitability of the low temperature joining technique (LTJT) for future module set-up, test samples were prepared and investigated. Already the replacement of only the chip-to-substrate solder joint (one-sided LTJT) improved the power cycling capability at DeltaTj=130K five times or at a DeltaTj=156K ten times compared to the expected capability of soldered and wire bonded devices at these conditions. Application of LTJT to top side chip connections also, i.e. additional replacement of bond wires by silver stripes joined by LTJT (double-sided LTJT), yielded a further increase of power cycling capability
Keywords :
low-temperature techniques; power MOSFET; semiconductor device testing; soldering; 175 C; 200 C; Al; LTJT; bond wires; chip-to-substrate solder joint; high temperature swing; low temperature joining technique; maximal junction temperature; power cycling; power devices; soft solder joints; top side chip connections; wire bonded devices; Bonding; Chemical technology; Diodes; Packaging; Silver; Soldering; Temperature; Testing; Thermal conductivity; Wires;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666110