DocumentCode
2368379
Title
Fully self-consistent calculation the large-signal response of a double-barrier heterostructure device
Author
Liou, Wan-Rone ; Yeh, Mei-Ling
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
123
Lastpage
124
Abstract
A fully self-consistent large-signal double-barrier (DB) heterostructure model is reported in this paper. Both dc and ac potentials are self-consistently solved with the Poisson and Schrodinger equations. This ensures that the model provides consistent topologies for both current and charge conservation of each harmonic. With this approach we can really count the impact of ac charge on the harmonic current calculation. Harmonic balance based simulation technique is used to calculated the frequency properties of primary harmonic as well as higher harmonics. A conventional undoped AlGaAs/GaAs/AlGaAs DB structure with thickness of 34 Å/34 Å/34 Å sandwiched between two lightly doped GaAs spacers is used as a test device. Generalized Wannier Picture is used to analyze this DB structure. In this paper, we also develop a new wave function matching technique to estimate the Hamiltonian elements at the interfaces of heterostructure.
Keywords
semiconductor device models; semiconductor heterojunctions; AC potential; AlGaAs-GaAs-AlGaAs; DC potential; Hamiltonian; Poisson equation; Schrodinger equation; charge conservation; current conservation; double-barrier heterostructure device; fully self-consistent calculation; function matching; generalized Wannier picture; harmonic balance; interface; large-signal response; model; simulation; Business; Concurrent computing; Displays; Educational institutions; Frequency; Lattices; Marine technology; Oceans; Schrodinger equation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865305
Filename
865305
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