Title :
A comparison of high-frequency voltage, current and field probes and implications for ESD/EOS/EMI auditing
Author :
Wallash, Al ; Kraz, Vladimir
Author_Institution :
Hitachi Global Storage Technol., San Jose
Abstract :
High-frequency voltage, current and field probes are used to characterize charged device model ESD. The relationships between voltage, current and field measurements are explored. A "unified theory of ESD auditing" that connects voltage, current and field measurements is described for comprehensive high-frequency ESD/EOS/EMI auditing.
Keywords :
electric current measurement; electric field measurement; electromagnetic interference; electrostatic discharge; voltage measurement; EMI; EOS; ESD auditing; charged device model; current probes; field probes; high-frequency voltage probe; Bandwidth; Coaxial components; Current measurement; Earth Observing System; Electromagnetic interference; Electromagnetic measurements; Electrostatic discharge; Probes; Voltage; Wire;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401757
