DocumentCode :
2368416
Title :
Noise characteristics of MOSFET ionizer balance sensor
Author :
Tanabe, Toshio ; Simon, Nainggolan ; Terashige, Takashi ; Okano, Kazuo
Author_Institution :
Polytech. Univ., Sagamihara
fYear :
2007
fDate :
16-21 Sept. 2007
Abstract :
The MOSFET ionizer balance sensor presented in this paper displays ten times better signal-to-noise (S/N) ratio than the standard charged plate monitor (CPM). The sensor also has higher spatial and voltage resolution, which qualifies it for use in the accurate sensing and monitoring of the operation of the air ionizers.
Keywords :
MOSFET; noise; MOSFET ionizer balance sensor; charged plate monitor; signal-to-noise ratio; spatial resolution; voltage resolution; Charge measurement; Current measurement; MOSFET circuits; Manufacturing processes; Monitoring; Pollution measurement; Sensor phenomena and characterization; Space charge; Spatial resolution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
Type :
conf
DOI :
10.1109/EOSESD.2007.4401758
Filename :
4401758
Link To Document :
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