• DocumentCode
    2368418
  • Title

    Automatic adaptive meshing for efficient electrostatic boundary element simulations

  • Author

    Bächtold, M. ; Korvink, J.G. ; Baltes, H.

  • Author_Institution
    Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • fYear
    1996
  • fDate
    2-4 Sept. 1996
  • Firstpage
    127
  • Lastpage
    128
  • Abstract
    The boundary element method (BEM) is well suited for the electrostatic analysis of large, geometrically complex structures. When highly accurate solutions are required, the discretization (meshing) of the geometry becomes increasingly important. A scheme is required to construct optimal meshes, in the sense that maximum accuracy of the solution can be achieved with minimal computational effort. Automatic adaptive meshing allows to automatically generate a good mesh, by iteratively refining the elements that contribute strongly to the overall error. An error indicator for BEM simulations is presented and an adaptive meshing scheme, involving both p- and h-type refinement. The generated discretizations lead to significantly higher accuracy for a given simulation size.
  • Keywords
    boundary-elements methods; electrostatics; mesh generation; BEM simulation; automatic adaptive meshing; boundary element method; discretization; electrostatic analysis; error indicator; Analytical models; Computational modeling; Electric potential; Electrostatic analysis; Geometry; Integral equations; Interpolation; Laboratories; Micromechanical devices; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
  • Print_ISBN
    0-7803-2745-4
  • Type

    conf

  • DOI
    10.1109/SISPAD.1996.865307
  • Filename
    865307