• DocumentCode
    2368533
  • Title

    Large signal substrate modeling in RF SOI technologies

  • Author

    Parthasarathy, Shyam ; Swaminathan, Balaji ; Sundaram, Ananth ; Groves, Robert A. ; Wolf, Randy L. ; AndersoN, Frederick G.

  • Author_Institution
    IBM SRDC, Bangalore, India
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    This paper describes a large signal Silicon on Insulator (SOI) substrate modeling methodology for high power circuit applications such as RF Switches. It is shown that the use of a varactor in place of a linear capacitor representing the buried oxide (BOX) improves the harmonic predictions of the circuit. The new substrate model is validated against 2nd and 3rd harmonics of an RF SOI switch operating at 890 MHz.
  • Keywords
    harmonic distortion; microwave switches; silicon-on-insulator; substrates; BOX; RF SOI technology; Si; buried oxide; frequency 890 MHz; harmonic prediction; high power circuit application; large signal substrate modeling; linear capacitor; silicon on insulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703320
  • Filename
    5703320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368533