DocumentCode
2368578
Title
FinFET compact modelling for analogue and RF applications
Author
Scholten, A.J. ; Smit, G.D.J. ; Pijper, R.M.T. ; Tiemeijer, L.F. ; Mercha, A. ; Klaassen, D.B.M.
Author_Institution
TSMC Res. Centre, NXP, Eindhoven, Netherlands
fYear
2010
fDate
6-8 Dec. 2010
Abstract
A new, compact expression for the effective FinFET gate resistance is derived and validated on experimental data. Moreover, FinFET thermal noise measurements are presented and analyzed. We show that the observed increase of drain current noise with drain-source voltage is not due to microscopic excess noise, but to the access resistances, which modify the transfer of channel thermal noise to the terminals.
Keywords
MOSFET; analogue circuits; millimetre wave field effect transistors; noise measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; FinFET compact modelling; FinFET thermal noise measurements; channel thermal noise; drain current noise; drain-source voltage; effective FinFET gate resistance; microscopic excess noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703322
Filename
5703322
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