• DocumentCode
    2368657
  • Title

    Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors

  • Author

    Go, Jonghyun ; Nair, Pradeep R. ; Reddy, Bobby, Jr. ; Dorvel, Brian ; Bashir, Rashid ; Alam, Muhammad A.

  • Author_Institution
    Sch. of ECE, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    Electronic sensing of biomolecules is an area of immerse interest for semiconductor industry. Here we utilize the remarkable sensitivity of double-gated field-effect transistors above the fundamental Nernst limit (59mV/pH) in pH sensing to improve the sensitivity of biomolecule detection in electrolyte screening limited conditions. Our simulation results and compact models are broadly supported by various experiments and will have important implications for the design and optimization of low cost, large throughput, semiconductor based biosensors.
  • Keywords
    biosensors; field effect transistors; nanoelectronics; nanosensors; pH measurement; Nernst limit; biomolecule detection; double-gated nanoscale field-effect transistors; electrolyte screening; pH sensing; ultra-sensitive DNA biosensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703325
  • Filename
    5703325