DocumentCode
2368657
Title
Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors
Author
Go, Jonghyun ; Nair, Pradeep R. ; Reddy, Bobby, Jr. ; Dorvel, Brian ; Bashir, Rashid ; Alam, Muhammad A.
Author_Institution
Sch. of ECE, Purdue Univ., West Lafayette, IN, USA
fYear
2010
fDate
6-8 Dec. 2010
Abstract
Electronic sensing of biomolecules is an area of immerse interest for semiconductor industry. Here we utilize the remarkable sensitivity of double-gated field-effect transistors above the fundamental Nernst limit (59mV/pH) in pH sensing to improve the sensitivity of biomolecule detection in electrolyte screening limited conditions. Our simulation results and compact models are broadly supported by various experiments and will have important implications for the design and optimization of low cost, large throughput, semiconductor based biosensors.
Keywords
biosensors; field effect transistors; nanoelectronics; nanosensors; pH measurement; Nernst limit; biomolecule detection; double-gated nanoscale field-effect transistors; electrolyte screening; pH sensing; ultra-sensitive DNA biosensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703325
Filename
5703325
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