• DocumentCode
    2368672
  • Title

    A realistic methodology for the worst case analysis of VLSI circuit performances

  • Author

    Hoon Lee, Sang ; Kim, Kyung-Ho ; Park, Jiri-Kyu ; Choi, Chang-Hoon ; Kong, Jeong-Taek ; Lee, Won-Woo ; Lee, Won-Seong ; Yoo, Jei-Hwan ; Cho, Soo-In

  • Author_Institution
    CAE, Samsung Electron. Co. Ltd., Kyungki, South Korea
  • fYear
    1996
  • fDate
    2-4 Sept. 1996
  • Firstpage
    155
  • Abstract
    Summary form only given. Minimising the circuit layout feature size can lead to improved performance, but it may also reduce the manufacturing yield. The smaller dimensions increase the relative variability of the process and make the circuit sensitive to process fluctuations such as, photo mask, depo/etch and furnace. In order to produce circuit designs that are more robust, it is crucial for designers to verify that circuit performances meet specifications across the entire range of process fluctuations. The driving force of previous work has thus been to come up with a simple and effective worst case design. In this work, a new approach to the statistical worst case of full-chip circuits, using the Principal Component Analysis (PCA) and the Gradient Analysis (GA), is proposed and verified. This method enables designers not only to predict the standard deviations of circuit performance but also to track circuit performances associated with process shift by measuring e-tests. Experimental qualification of the method is described using a 0.25 μm 256 Mbit DRAM.
  • Keywords
    VLSI; integrated circuit design; integrated circuit modelling; statistical analysis; SPICE model parameters; VLSI circuit performances; circuit layout feature size; gradient analysis; manufacturing yield; principal component analysis; process fluctuations; statistical worst case; worst case analysis; Circuit analysis; Circuit synthesis; Etching; Fluctuations; Furnaces; Manufacturing; Performance analysis; Principal component analysis; Robustness; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
  • Print_ISBN
    0-7803-2745-4
  • Type

    conf

  • DOI
    10.1109/SISPAD.1996.865318
  • Filename
    865318