Title :
Analytical modeling of external latchup
Author :
Farbiz, Farzan ; Rosenbaum, Elyse
Author_Institution :
Illinois Univ., Urbana
Abstract :
A model is presented for external latchup. The effects of spacing, temperature, supply voltage and layout are captured in the model. The model shows a good fit to data in two different technologies, RF-CMOS and SmartMOS.
Keywords :
CMOS integrated circuits; semiconductor device models; RF-CMOS; SmartMOS; analytical modeling; external latchup; Analytical models; Circuit testing; Diodes; Electronic mail; Electrostatic discharge; Ethernet networks; Semiconductor device modeling; Temperature; Variable structure systems; Voltage;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401772
